Revisiting the electronic properties of disclinated graphene sheets

The interplay between topological defects, such as dislocations or disclinations, and the electronic degrees of freedom in graphene have been extensively studied. In literature, for study this kind problems, it is general used either a gauge theory curved spatial Riemannian geometry approach, where, geometric case, information about defects contained metric spin-connection. However, these can also be associated with Riemann–Cartan where curvature torsion plays an important role. article, we wedge disclination planar sheet properties its freedom. Our approach relies on relation elasticity through so called elastic-gauge, their typical coefficients, example Poisson’s ratio, appear directly metric, consequently spectrum.